SSFM2508 25v n-channel mosfet www.goodark.com page 1 of 7 rev.2.0 main product characteristics: v dss 25v r ds (on) 8mohm i d 55a features and benefits: ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature ? lead free product description: it utilizes the latest frrmos (fast reverse recovery mos) trench processing techniques to achieve extremely low on resistance, fast switching speed and short reverse recovery time. these features combine to make this design an extremely efficient and reliable device for use in pwm, load switching and a wide variety of other applications absolute max rating: symbol parameter max. units id @ tc = 25c continuous drain current, vgs @ 10v 55 id @ tc = 100c continuous drain current, vgs @ 10v 45 idm pulsed drain current 120 ism pulsed source current (body diode) 120 a pd @tc = 25c power dissipation 50 w pd @tc =100c power dissipation 25 w v ds drain-source voltage 25 v vgs gate-to-source voltage 20 v eas single pulse avalanche energy @ l=0.1mh 80 mj iar avalanche current @ l=0.1mh 40 a tj tstg operating junction and storage temperature range -55 to + 175 c thermal resistance symbol characterizes value unit r jc junction-to-case 2.5 /w junction-to-ambient ( t 10s) 14 /w r ja junction-to-ambient (pcb mounted, steady-state) 38 /w to-252 dpak marking and pin assignment SSFM2508 to-252 dpak marking and pin assignment SSFM2508
SSFM2508 25v n-channel mosfet www.goodark.com page 2 of 7 rev.2.0 electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max units conditions bvdss drain-to-source breakdown voltage 25 v vgs = 0v, id = 250a rds(on) static drain-to-source on-resistance 6 8 m vgs = 10v, id = 30a vgs(th) gate threshold voltage 1.5 2 2.5 v vds = vgs, id = 250a 10 vds = 25v, vgs = 0v idss drain-to-source leakage current 50 a vds = 25v, vgs = 0v, tj = 55c gate-to-source forward leakage 100 vgs =20v igss gate-to-source reverse leakage -100 na vgs = -20v qg total gate charge 20.6 25 qgs gate-to-source charge 5.3 6 qgd gate-to-drain("miller") charge 5.9 6.5 qg(th) gate charge at shreshold 2.6 3 nc vplateau gate plateau voltage 4.1 5 v id = 30a, vds=12.5v, vgs = 10v td(on) turn-on delay time 10.4 tr rise time 6.4 td(off) turn-off delay time 22.4 tf fall time 7.2 ns vgs=10v, vds=15v, rl=10, rgen=3 ciss input capacitance 1210 coss output capacitance 320 crss reverse transfer capacitance 220 pf vgs = 0v, vds = 15v, ? = 1.0mhz r g gate resistance 1.5 v gs =0v, v ds =0v, f=1mhz source-drain ratings and characteristics symbol parameter min. typ. max units conditions is maximum body-diode continuous curren 55 a vsd diode forward voltage 0.7 1 v is=1a, vgs=0v trr reverse recovery time 9.5 ns qrr reverse recovery charge 3.8 nc tj = 25c, if =30a, vdd = 30v, di/dt = 200a/s ton forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld)
SSFM2508 25v n-channel mosfet www.goodark.com page 3 of 7 rev.2.0 typical electrical and thermal characteristics figure 1: typical output characteristics figure 2: typical transfer characteristics figure 3: on-resistance vs. drain current and figure 4: on-resistance vs. junction gate voltage temperature figure 5: on-resistance vs. gate-source voltage figure 6: body-diode characteristics 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 vds,drain to source voltage(v) id,drain to source current(a) 10v 7v 6v 3.5v 4v 4.5v 5v 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 vgs,gate to source voltage(v) id,drain to source current(a) 125 25 vds=5v 0 1 2 3 4 5 6 7 8 9 10 11 12 13 0 5 10 15 20 25 30 id,drain current(a) rdson,drain-to-source on resistance(normalized) vgs=4.5v vgs=10v 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 0 25 50 75 100 125 150 175 200 tj,junction temperature(c) rdson,drain-to-source on resistance(normalized) vgs=10v id=30a vgs=4.5v id=20a 0 5 10 15 20 25 30 2 3 4 5 6 7 8 9 10 vgs,gate to source voltage(v) rdson,drain-to-source on resistance(normalized) 125 25 id=30v 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 vsd,source to drain voltage(v) is,source to drain current(a) 125 25
SSFM2508 25v n-channel mosfet www.goodark.com page 4 of 7 rev.2.0 typical electrical and thermal characteristics figure 7: gate-charge characteristics figure 8: capacitance characteristics figure 9: maximum forward biased safe figure 10: single pulse power rating operating area( ) junction-to-case ( ) figure 11: power de-rating ( ) figure 12: current de-rating ( ) 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 qg,gate charge(nc) vgs,gate to source voltage(v) vds=12.5v id=30v 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 25 vds, drain to source voltage(v) capacitance (pf) ciss coss crss vgs=0,f=1mhz ciss=cgd+cgs, cds shorted coss=cds+cgd crss=cgd 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 25 vds, drain to source voltage(v) capacitance (pf) ciss coss crss vgs=0,f=1mhz ciss=cgd+cgs, cds shorted coss=cds+cgd crss=cgd 0.1 1 10 100 1000 0.01 0.1 1 10 100 vds,drain to source voltage(v) id,drain current(a) 10us 100us 1ms 10ms dc ron limited tj(max)=175 tc=25 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) power ( w) tj(max)=175 ta=25 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 tcase (c) power dissipation (w) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 tcase (c) id,drain current(a)
SSFM2508 25v n-channel mosfet www.goodark.com page 5 of 7 rev.2.0 typical electrical and thermal characteristics figure 13: normalized maximum transient thermal impedance ( ) figure 14: normalized maximum transient thermal impedance ( ) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) zjc,transient thermal resistance( normalized ) duty cycle d= 0.5,0.3,0.1,0.05,0.01,single duty cycle d=t1/t, tj max pdm*z jc*r jc+tc r jc=3 /w 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) zja,transient thermal resistance( normalized ) duty cycle d=0.5,0.3,0.1, 0.05,0.01,single duty cycle d=t1/t, tj max pdm*z ja*r ja+ta r ja=50 /w
SSFM2508 25v n-channel mosfet www.goodark.com page 6 of 7 rev.2.0 notes: the maximum current rating is limited by bond -wires. repetitive rating; pulse width limited by max. juncti on temperature. the power dissipation pd is based on max. junction temperature, using junction -to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of tj(max)=175c. the maximum current rating is limited by bond-wires.
SSFM2508 25v n-channel mosfet www.goodark.com page 7 of 7 rev.2.0 mechanical data
|
